InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy

ABSTRACTRaman, photoluminescence, and Hall measurements are reported for Mg doped GaN films grown by molecular beam epitaxy. The compressive and tensile stress determined by the Raman shift of the phonon lines is due to the growth conditions rather than the presence of Mg in the film. The photoluminescence peak of near band-to-band transitions is also shifted to larger (smaller) energies by the compressive (tensile) stress. The study of the longitudinal optical phonon of the Ai branch shows that its Raman line shape is affected not only by phonon-plasmon interactions but by the crystalline quality of the film, as well.

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Properties of Mg doped GaAs grown by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)01364-1 ◽

2001 ◽

Vol 226 (1) ◽

pp. 52-56 ◽

Cited By ~ 15

Author(s):

Jong Su Kim ◽

I.H. Bae ◽

J.Y. Leem ◽

S.K. Noh ◽

J.I. Lee ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Mg Doped

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Studies of Mg-GaN grown by MBE on GaAs(111)B substrates

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300001393 ◽

1997 ◽

Vol 2 ◽

Cited By ~ 11

Author(s):

T. S. Cheng ◽

C. T. Foxon ◽

N. J. Jeffs ◽

D. J. Dewsnip ◽

L. Flannery ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Film Thickness ◽

Molecular Beam ◽

Diffusion Mechanism ◽

Surface Concentration ◽

Chemical Concentration ◽

Doping Density ◽

Surface Population ◽

Rapid Diffusion ◽

Mg Doped

This paper discusses the growth of Mg-doped GaN samples using a modified Molecular Beam Epitaxy (MBE) method. Our results suggest that the dopant is incorporated from a surface population maintained by the incident Mg flux by a rapid diffusion mechanism. It follows that the chemical concentration will increase with time of growth and that the p-doping level will also increase progressively with film thickness for a given Mg flux. Increasing the Mg flux to the surface results at first in a higher doping density, but this saturates when the Mg surface concentration reaches a finite value.

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Influence of Doping on the Lattice Dynamics of Gallium Nitride

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300002672 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 327-332 ◽

Cited By ~ 1

Author(s):

A. Kaschner ◽

H. Siegle ◽

A. Hoffmann ◽

C. Thomsen ◽

U. Birkle ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Lattice Dynamics ◽

Molecular Beam ◽

High Energy ◽

Host Lattice ◽

Free Carrier ◽

Vibrational Modes ◽

Local Vibrational Modes ◽

Secondary Ion ◽

Mg Doped

We present results of Raman-scattering experiments on GaN doped with Si, C, and Mg, respectively, grown by molecular beam epitaxy (MBE). The influence of the different dopants on strain and free-carrier concentration was investigated. Furthermore, we report on several local vibrational modes (LVM) around 2200 cm−1 in Raman spectra of highly Mg-doped GaN. A possible explanation of these high-energy modes in terms of hydrogen-related vibrations is given. We also found a variety of new structures in the range of the GaN host lattice phonons. Secondary ion mass spectroscopy (SIMS) was applied to determine the concentration of magnesium and unintentionally incorporated hydrogen.

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